2
RF Device Data
Freescale Semiconductor, Inc.
MRF8P18265HR6 MRF8P18265HSR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=30Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
(1)
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 200
μAdc)
VGS(th)
1.1
1.9
2.6
Vdc
Gate Quiescent Voltage
(VDD
=30Vdc,IDA
= 800 mAdc, Measured in Functional Test)
VGS(Q)
1.8
2.6
3.3
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=2Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Functional Tests
(2,3)
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=30Vdc,IDQA
= 800 mA, VGSB
=1.3V,Pout
=72WAvg.,
f = 1880 MHz, Single--Carrier W--CDMA, IQ
Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
13.8
16.0
17.0
dB
Drain Efficiency
ηD
41.0
43.7
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.0
6.7
?
dB
Adjacent Channel Power Ratio
ACPR
?
--32.2
--28.0
dBc
Typical Broadband Performance
(3)
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=30Vdc,IDQA
= 800 mA, VGSB
=1.3V,
Pout
= 72 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz
15.9
44.8
6.9
--31.7
1840 MHz
16.1
43.4
7.0
--31.7
1880 MHz
16.0
43.7
6.7
--32.2
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a symmetrical Doherty configuration.
(continued)
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